ELLIPSOMETRIC STUDY OF Si1-x Gex ALLOY

Authors

  • Suriati Paiman Physics Dept., Faculty of Science and Environmental Studies, Universiti Putra Malaysia, Serdang, Selangor. Author
  • Samsudi Sakrani Thin Films Laboratory, Physics Dept., Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor. Author
  • Bakar Ismail Thin Films Laboratory, Physics Dept., Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor. Author
  • Zainal Abidin Talib Physics Dept., Faculty of Science and Environmental Studies, Universiti Putra Malaysia, Serdang, Selangor Author

Keywords:

Si1-xGex, Refractive Index, Ellipsometer

Abstract

A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were investigated using an ellipsometer. In this method, we investigate the changes in refractive indices, n and extinction coefficients, k with film thickness as well as the relevant dielectric constant, ε. The results showed that, at a wavelength of 632.80 nm, n was found to increase with an increase of the germanium contents.

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Published

17-08-2025

Issue

Vol. 11 No. 1 (2003): Solid State Science and Technology

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.