DEPOSITION OF ALUMINIUM NITRIDE THIN FILM ON KAPTON FILM USING SPUTTERING METHOD

Abstract

Many attempts have been made to deposited aluminium nitride (AlN) thin film by using sputtering method on flexible substrates. Deposition of AlN thin film on kapton film can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, AlN thin films grown on the kapton film using radio-frequency sputtering method were explored. The AlN thin films were deposited by reactive RF sputtering of a pure aluminium target (99.999%), in an argon and nitrogen atmosphere. The structural and surface morphology properties of the deposited thin films were investigated by X ray diffraction , field-emission scanning electron microscope and dispersive X-ray spectroscopy; while the optical properties of the deposited thin films were determined by using Fourier transform infrared spectrometer.