INTENSITY THRESHOLD STUDY OF 6T, 7T AND 10T SRAM BY TCAD SIMULATION WITH OPTICAL BEAM

Abstract

Due to hazard and difficulty of emulating high energy space particle and rays in labs, Technology Computer Aided Design (TCAD) simulation is considered as a viable alternative for any space exploration. This paper presents a TCAD simulation to show a comparison study of intensity threshold for 6-T, 7-T and 10-T SRAM. To show the comparison, Single Event Upset (SEU) simulation has done with pulsed optical beam by mixed-mode feature of Silvaco ATLAS. Mixed- mode is a mixed circuit and device simulator which can handle both circuit and device. In this study, SRAM cell have been simulated by using SPICE coding in mixed-mode where targeted transistor is a physically based device. The target transistor is used to evaluate the intensity threshold for bit-flip in the simulated SRAM circuit. This method significantly reduce the time of simulation and can handle both the device and circuit simultaneously. The results show that for these particular structures, intensity threshold is increasing with the increase of transistor number in the SRAM. This study shows a new feature of larger transistors SRAM though it has some area penalty.