INVESTIGATION OF SOLAR CELLS FABRICATED ON n-TYPE SUBSTRATES

Abstract

n comparison with p-doped wafers, the n-doped wafer offers advantages in terms of superior tolerance to impurities and lack of light induced degradation. Recent defect studies on solar cell have also determined a higher tolerance of chemical and crystallographic defects in n-type wafer. In addition, the solar cells fabricated on n-type wafers are less susceptible to shunt especially in high efficiency solar cells which require shallow emitters. In this paper, n+np+ solar cell configuration has been modelled using commercially available PC1D resulting in efficiency of 19.56 %. With identical processing conditions based on conventional POCl3-emitter formation. Preliminary solar cell LIV measurements exhibit efficiencies of 5.51 % and 9.44 % for n and p doped wafers, respectively.