Cu2Zn1-xCdxSnS4 QUINTERNARY ALLOYS NANOSTRUCTURES DEPOSITED ON POROUS SILICON BY SOL–GEL SPIN COATING TECHNIQUE

Authors

  • A.S. Ibraheam Institute of Nano Electronic Engineering, University Malaysia Perlis UniMAP, 01000 Kangar, Perlis, Malaysia Author
  • Y. Al-Douri Institute of Nano Electronic Engineering, University Malaysia Perlis UniMAP, 01000 Kangar, Perlis, Malaysia Author
  • U. Hashim Institute of Nano Electronic Engineering, University Malaysia Perlis UniMAP, 01000 Kangar, Perlis, Malaysia Author

Keywords:

Nanostructure, Quinternary Alloys, Porous silicon

Abstract

The obtained results are in good agreement with experimental and theoretical data Cu2Zn1-xCdxSnS4 nanostructures with different Zn and Cd contents were grown by a sol-gel method on porous silicon (63.93%.) substrate. The obtained Cu2Zn1-xCdxSnS4 nanostructures/PS (63.93%) products were investigated by Field Emission-Scanning Electron Microscope (FE-SEM), X-ray diffraction (XRD).

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Published

20-01-2026

Issue

Vol. 26 No. 1 (2018): Solid State Science and Technology

Section

Articles

License

Copyright (c) 2018 Solid State Science and Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.