GROWTH MECHANISM OF SILICON OXIDE NANOWIRES SYNTHESIZED IN A CARBOTHERMAL CHEMICAL VAPOR DEPOSITION REACTOR

Authors

  • Nurul Aimi Zakaria Faculty of Applied Science, Universiti Teknologi MARA, 35400 Tapah Road, Perak MALAYSIA Author
  • Roslan Md Nor Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur MALAYSIA Author
  • Nurul Ain Samat Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur MALAYSIA Author
  • Siti Sumaiyah Sheikh Abdul Aziz Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur MALAYSIA Author

Keywords:

SiO2 nanowires, Carbothermal, Growth mechanism

Abstract

Silicon oxide nanowires (SiO2NWs) have been synthesized using the carbothermal method on silicon at 1000 °C utilizing gold as the catalyst. Field Emission Scanning Electron Microscopy (FESEM) analysis revealed that thin gold layer agglomerated into nanosized particles which formed the spots for SiO2NWs growth. A growth mechanism model based on the dissolution and condensation of Silicon on the gold nanoparticles is proposed. Energy Dispersive X-ray Spectroscopy (EDX) and X-ray Diffraction Analysis (XRD) were performed on the SiO2 nanowires samples.

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Published

20-01-2026

Issue

Vol. 26 No. 1 (2018): Solid State Science and Technology

Section

Articles

License

Copyright (c) 2018 Solid State Science and Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.