FABRICATION OF Bi-Ti-O THIN FILM PRESSURE SENSOR PREPARED BY ELECTRON BEAM EVAPORATION METHOD

Authors

  • Cheong Wei Chong Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia Author
  • Muhammad Yahaya Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia Author
  • Muhammad Mat Salleh Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia Author

Abstract

Polycrystalline Bi-Ti-O thin film was prepared by multilayer deposition method using electron beam evaporation. The thin film was obtained by sequentially evaporating Bi2O3 / TiO2 layers on Si / SiO2 / Ti / Pt substrate followed by annealing for 30 minutes in air at 850°C. A pressure sensor was fabricated by depositing Al film electrode on the top of the annealed multilayer films. The piezoelectric response of the sensor was then measured by pneumatic loading method. It was found that the sensor was sensitive to the applied pressure and showed good repeatability. This study showed the potentiality to obtain Bi-Ti-O thin film pressure sensor by electron beam multilayer deposition.

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Published

16-03-2026

Issue

Vol. 13 No. (1&2) (2005): Solid State Science and Technology

Section

Articles

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Copyright (c) 2005 Solid State Science and Technology

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.