Ti/Pt SCHOTTKY CONTACT MEASUREMENTS FOR HEMT GATE METALLIZATION USING CURRENT-VOLTAGE METHOD

Authors

  • Ashaari Yusof Microelectronic & Nano Technology Programme, Telekom Research & Development Sdn. Bhd Author
  • Hariyadi Soetedjo Microelectronic & Nano Technology Programme, Telekom Research & Development Sdn. Bhd Author
  • Mohd Nizam Osman Microelectronic & Nano Technology Programme, Telekom Research & Development Sdn. Bhd Author
  • Asban Dolah Microelectronic & Nano Technology Programme, Telekom Research & Development Sdn. Bhd Author
  • Mohamed Razman Yahya Microelectronic & Nano Technology Programme, Telekom Research & Development Sdn. Bhd Author
  • Abdul Fatah Awang Mat Microelectronic & Nano Technology Programme, Telekom Research & Development Sdn. Bhd Author
  • Azlan Abdul Aziz School of Physics, Universiti Sains Malaysia Author
  • Kamarulazizi Ibrahim School of Physics, Universiti Sains Malaysia Author

DOI:

https://doi.org/10.66514/

Abstract

A study of Schottky contact from Ti/Pt metal stack on Si-doped AlGaAs HEMT supply layer using current-voltage method is presented here. The Schottky barrier heights at metal-semiconductor junction were determined on two samples prepared by MBE. From plots of natural logarithm of current density versus voltage sweep, the values of current density at zero voltage were extrapolated, hence enabling the calculation of schottky barrier values. The effect of thermal annealing on Schottky barrier height for each sample were also discussed here. From this experiment, Schottky barrier heights with values for 0.65 eV has been successfully obtained from the metal-semiconductor interface.

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Published

18-04-2026

Issue

Vol. 15 No. 2 (2007): Solid State Science and Technology

Section

Articles

License

Copyright (c) 2007 Solid State Science and Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.