STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ALUMINUM DOPED ZINC OXIDE THIN FILMS AT DIFFERENT ANNEALING TEMPERATURES

Abstract

The Al doped ZnO thin films with doping concentration of 1 at.% have been prepared using sol-gel spin-coating method and have been annealed at temperatures of 350~500 °C. The thin films were characterized using x-ray diffractometer (XRD), UV-Vis-NIR spectrophotometer and current voltage (I-V) measurement system for structural, optical and electrical properties characterization, respectively. XRD pattern reveals the improvement of c-axis orientation with annealing temperatures. The Urbach energy as calculated from transmittance spectra increased with annealing temperatures. I-V measurement results revealed improvement in electrical properties of the thin films with annealing temperatures.