MODELING AND SIMULATION OF HETEROJUNCTION OF InGaAs/GaAs SOLAR CELL BY USING SILVACO SOFTWARE

Abstract

In this paper presented a heterojunction of InGaAs/GaAs solar cell is modeled and fully simulated by Silvaco software with demonstrated by two-dimensional analysis. The InGaAs window layers of GaAs heterojunction solar cell help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. The fabrication process and simulation of photovoltaic properties are performing by using ‘Virtual Wafer Fabrication’ software produced by SILVACO Inc. TCAD tools. Three types of concentration doping of Phosphorus were chose in this work which is 1×1017 ion/cm-2, 1×1019 ion/cm-2 and 1×1020 ion/cm-2. These simulations were run in 30°, 60° and 90° of incident light for each doping concentration. The factors affected the efficiencies and performance which consists of concentration doping, angle of incident light and junction depth of solar cell are analyzed and discussed. As the results, the maximum efficiency is 36.48% from 1×1017 ion/cm-2 doping in 90° incident light, while the electrical characteristics gives lower Isc value and higher Voc value. As a conclusion, the efficiency of 36.48% has produced the thinnest junction depth of InGaAs window layer and GaAs emitter layer.