DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON (nc-Si:H) FILMS BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION

Authors

  • Chee Han Shi Solid State Research Laboratory, Physics Department, University Malaya Author
  • Boon Tong Goh Solid State Research Laboratory, Physics Department, University Malaya Author
  • Richard Ritikos Solid State Research Laboratory, Physics Department, University Malaya Author
  • Siti Meriam Ab. Gani Solid State Research Laboratory, Physics Department, University Malaya Author
  • Muhamad Rasat Muhamad Solid State Research Laboratory, Physics Department, University Malaya Author
  • Saadah A. Rahman Solid State Research Laboratory, Physics Department, University Malaya Author

DOI:

https://doi.org/10.66514/

Abstract

In this work, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by radio-frequency Plasma Enhanced Chemical Vapour Deposition (rf-PECVD) technique on crystal silicon (c-Si) substrate at different rf power with a constant silane to hydrogen partial pressure ratio. The effects of rf power on the structural properties of nc-Si:H films deposited on c-Si substrate were studied using Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), micro-Raman spectroscopy, and scanning electron microscopy (SEM). The RF power showed influence on the structural properties of nc-Si:H films. The presence of nanocrystallite clusters in the film structures was observed strongly at low rf power.

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Published

18-04-2026

Issue

Vol. 15 No. 2 (2007): Solid State Science and Technology

Section

Articles

License

Copyright (c) 2007 Solid State Science and Technology

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.