ANNEALING EFFECTS ON ELECTRICAL CHARACTERISTICS OF GaAs IMPLANTED WITH 100 MeV 56Fe and 120Sn IONS

Authors

  • Yousuf Pyar Ali Department of Physics, Hadharamout University, Mukalla, Yemen Author
  • K. V. Sukhatankar Department of Physics, Gogate-Jogalekar College, Ratnagiri Author
  • A. M. Narsale Department of Physics, University of Mumbai, Vidyanagari, Mumbai Author

DOI:

https://doi.org/10.66514/

Abstract

Single crystal n-GaAs substrates have been implanted at room temperature with 70 MeV 56Fe and 120Sn ions to a fluence of 1x1018 ions/m2. The electrical characteristics were investigated after implantation and annealing up to 850 °C by current voltage measurements. Low temperature resistance measurements of these samples show that the 56Fe implanted samples annealed to 350 °C and 120Sn implanted samples annealed to 450 °C are dominated by a variable range hoping conduction, whereas for the 56Fe implanted samples annealed to 450 °C and 550 °C and 120Sn implanted samples annealed to 550 °C and 650 °C the electrical conduction is due to hoping between neighboring defect sites.

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Published

18-04-2026

Issue

Vol. 15 No. 2 (2007): Solid State Science and Technology

Section

Articles

License

Copyright (c) 2007 Solid State Science and Technology

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.