TRANSMISSION OF TEXTURED SiNW USING IR MEASUREMENT SYSTEM

Abstract

Crystalline silicon (Si) based on pollution free photovoltaic (PV) electricity generation technology is expected to play a dominant role in this electricity generation transition from carbon to silicon. Silicon remains the material of choice for PV because of its abundance, high and stable cell efficiencies. Si wafer has to go through standard manufacturing process consist of damage removal, cleaning and texturing process. This study presents the various surface of p-type Si wafer; planar, textured and SiNW. Surface morphology, optical properties and the optical transmission near band gap is measured with custom-designed rear infra-red (IR) transmission measurement system. Si wafer with the SiNW surface have more light absorption than the planar and textured Si wafer.