GROWTH OF BINARY, TERNARY AND QUATENARY III-V COMPOUNDS NANOWORES BY MOCVD

Authors

  • Z. Othaman Department of Physics, Universiti Teknologi Malaysia, Skudai, 81310 Johor Bahru, Malaysia Author
  • E. Wibowo Department of Physics, Universiti Teknologi Malaysia, Skudai, 81310 Johor Bahru, Malaysia Author
  • S. Sakrani Department of Physics, Universiti Teknologi Malaysia, Skudai, 81310 Johor Bahru, Malaysia Author

Keywords:

III-V compounds NWs, MOCVD, gold seed particles assisted, seed free assisted

Abstract

Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1-xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs have been successfully grown. The growth of NWs has been assisted by gold nanocolloids as seed particles. Besides this technique, seed free-assisted growth of NWs has also been demonstrated. InxGa1-xAs NWs have been successfully grown without gold seed particle assisted.

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Published

14-06-2026

Issue

Vol. 19 No. 2 (2011): Solid State Science and Technology

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.