G. GOPIR; Y. Y. KHOO; C. Y. WOON; A. P. OTHMAN. SELF-CONSISTENT CALCULATION WITH ADAPTIVE BOUNDARY CONDITION OF ELECTRON STATES IN SILICON n-MOS NANOSTRUCTURES. Solid State Science and Technology, [S. l.], v. 20, n. (1&2), p. 88–95, 2026. Disponível em: https://journal.massmalaysia.org/ojs/index.php/ssst/article/view/637. Acesso em: 26 jul. 2026.