SELF-CONSISTENT CALCULATION WITH ADAPTIVE BOUNDARY CONDITION OF ELECTRON STATES IN SILICON n-MOS NANOSTRUCTURES

Authors

  • G. Gopir School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia Author
  • Y. Y. Khoo School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia Author
  • C. Y. Woon School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia Author
  • A. P. Othman Institute of Space Science (ANGKASA), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia Author

Keywords:

MOS inversion layer, nanostructure, self-consistent calculation, Schrödinger-Poisson, electron state

Abstract

We develop a computational procedure to calculate the properties of electron states in a Si n-MOS inversion layer by discretizing and iteratively solving the differential Schrödinger and Poisson equations using centered finite differences. In this self consistent calculation, we apply an adaptive boundary condition to the wave function and confining potential at the bulk side of the nanostructure; and incorporate Fermi Dirac distribution for the ionized acceptor density in the inversion and depletion layers. This requires relatively simpler inputs and we are able to determine the various parameters of the electron state subbands. We compared our results with those published in the literature applying self-consistent Schrödinger-Poisson calculation on similar Si n-MOS nanostructures.

Downloads

Published

10-05-2026

Issue

Vol. 20 No. (1&2) (2012): Solid State Science and Technology

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

G. Gopir, Y. Y. Khoo, C. Y. Woon, & A. P. Othman. (2026). SELF-CONSISTENT CALCULATION WITH ADAPTIVE BOUNDARY CONDITION OF ELECTRON STATES IN SILICON n-MOS NANOSTRUCTURES. Solid State Science and Technology, 20((1&2), 88-95. https://journal.massmalaysia.org/ojs/index.php/ssst/article/view/637