G. Gopir, Y. Y. Khoo, C. Y. Woon, and A. P. Othman, “SELF-CONSISTENT CALCULATION WITH ADAPTIVE BOUNDARY CONDITION OF ELECTRON STATES IN SILICON n-MOS NANOSTRUCTURES”, Solid State Sci. Technol., vol. 20, no. 1 & 2, pp. 88–95, May 2026, Accessed: Jul. 26, 2026. [Online]. Available: https://journal.massmalaysia.org/ojs/index.php/ssst/article/view/637