GROWTH AND CHARACTERIZATION OF AlGaN THIN FILMS VIA SOL GEL SPIN COATING METHOD

Abstract

In this study, the growth and characterization of aluminum gallium nitride (AlGaN) thin film grown on aluminum nitride on silicon (111) template via sol-gel spin coating method were reported. The structural, morphological and optical properties of Al_0.1Ga_0.9N thin film were compared with GaN thin film which prepared using the same method. The structural and surface morphological properties of the deposited films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). XRD results revealed that all the deposited GaN and AlGaN thin films have wurtzite structure and with preferred growth orientation of (002). The FESEM and AFM revealed that the deposited GaN and AlGaN thin films have uniform and smooth surface. The optical characteristics of the GaN and AlGaN thin films were excessed by using Fourier transform infrared (IR) spectrometer. It was observed from the IR results that the E1(TO) peak was shifted to higher wavenumber for the AlGaN sample.