STRUCTURAL AND MORPHOLOGY STUDIES OF Cu-In-Se (CIS) THIN FILMS BY SCREEN-PRINTING AND SINTERING METHOD

Authors

  • S. Habibi Department of Electrical, Electronics and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Author
  • H. Abdullah Department of Electrical, Electronics and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Author
  • S. Shaari Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia. Author

Abstract

CuInSe (CIS) thin films are the best candidate as absorber material for solar cell application and successfully produced by screen-printing and sintering method. Screen printing and sintering of CIS layers is a low cost technique for obtaining homogeneous layers on a large scale. Pure Cu, In and Se powders were mixed and ground with ethyl alcohol to a grain size of 1.5 μm. CuInSe2 paste was screen-printed on FTO glass substrate and sintered at 350 oC for 60 min. The pastes were tested by X-ray diffractometer (XRD) for crystallinity, Scanning Electron Microscope (SEM) for grain size and thickness, and Energy Dispersive X-ray Spectroscopy (EDX) for CuInSe2 paste composition. The results indicated that there is non-homogenous agglomeration and random surface texture in SEM images. The grain size of the samples is in average around 10 – 15 µm meanwhile the thickness measured is around 23 – 60 µm. From EDX analysis, there is higher amount of copper indicating the building of a secondary phase at the surface. XRD analysis revealed the high diffraction of CIS peaks are at 2 Theta of 44.3 and 26.6 correspond to the (2 2 0) / (2 2 4) and (1 1 2).

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Published

09-05-2026