TEMPERATURE DEPENDENCE OF Zn1-xInxO (x = 0.1 and 0.2) THIN FILMS PREPARED BY SOL-GEL METHOD

Abstract

In this work we present a study on the effect of annealing temperatures on the structural, morphological and optical characteristics of In doped Zn1-xInxO (x = 0.1 and 0.2) films, were deposited at room temperature by sol-gel method. Zinc acetate dehydrate was used. 2-methoxyethanol and monoethanolamine were used as the solvent and stabilizer, respectively. The dopant source was Indium chloride. All films were annealed at temperatures of 400, 500 and 600 °C for 1 h. Structural investigation including surface morphology and microstructure was carried out by XRD and SEM measurements. The results show that In built into the crystal lattice of the ZnO and the surface of the particles enriched in In ions. The optical properties were determined by UV-VIS spectrum analyses. Value of band gap were obtained is slightly increased as concentration of In increase. It was proposed that annealing temperature plays a key role in the formotion of defects, which is strongly related to the nonradiative recombination centers.