EFFECT OF METHANE FLOW RATE ON THE  PROPERTIES OF HWCVD SILICON CARBIDE THIN FILMS

Authors

  • F. Shariatmadar Tehrani Solid State Research Laboratory, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia Author
  • R. Ritiikos Solid State Research Laboratory, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia Author
  • B. T. Goh Solid State Research Laboratory, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia Author
  • M.R. Muhamad Solid State Research Laboratory, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia Author
  • S. A. Rahman Solid State Research Laboratory, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia Author

Keywords:

SiC, thin film, optical bond gap

Abstract

Silicon carbide (SiC) thin films were prepared by Hot Wire Chemical Vapor Deposition (HWCVD) from SiH4/CH4 gases on glass and crystalline silicon substrates. The SiH4 gas flow rate was 1 sccm and influences of CH4 gas flow rate, [CH4], on structural properties of SiC thin films were investigated. The mean crystallite size was increased with decreasing [CH4] from 100 to 10 sccm. Infrared absorption spectra showed that the Si–C bonds increased with decreasing the methane gas flow rate.

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Published

23-05-2026

Issue

Vol. 19 No. 1 (2011): Solid State Science and Technology

Section

Articles

License

Copyright (c) 2026 F. Shariatmadar Tehrani, R. Ritiikos, B. T. Goh, M.R. Muhamad, S. A. Rahman (Author)

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.