THE CHARACTERIZATION OF DOPING DOSE, ANNEAL TIME AND TEMPERATURE FOR SILICON SOLAR CELL EFFICIENCY

Abstract

This paper is carry out aiming on produce one design and fabrication of solar cell with various parameters to measure which are concentration of phosphorus, anneals time and temperature that can be the optimum value of silicon solar cell. These parameters are important to definite the optimum depth so that the best efficiency of solar cell can be achieved. The variable parameter for phosphorus doping is 13, 15 and 17, meanwhile the anneal time is 5 min, 10 min and 15 min, and the anneal temperature is 900 oC, 950 oC, 1000 oC and 1050 oC are considered in this project. This project included the basic principle of operations, creation and fabrication process of solar cell structure, and the electrical characteristics simulated in details. The fabrication process and simulation of solar cell are performing by using ‘Virtual Wafer Fabrication’ software produced by SILVACO Inc. TCAD tools. There are two sub aid module which are modelling a solar cell device and simulated the electrical characteristic were computed by Athena and Atlas simulator, respectively. Spectral response and I-V characteristic graphs are important output that produce a short circuit current density, Jsc and open circuit voltage, Voc were changed due to various parameters on silicon solar cell. As a conclusion, the result outcome shows that solar cell operated according to the optimum efficiency when phosphorus doping is 8 × 1015 atom/cm2 during 5 min at 900oC in annealing process and each has 13.08%, 13.47%, 13.89%, respectively.