EFFECT OF OXYGEN ADDITION ON SIDEWALLS OF SILICON SQUARE MICRO-PIT ARRAYS USING SF6 BASED REACTIVE ION ETCHING

Authors

  • Maryam Alsadat Rad Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia. Author
  • Kamarulazizi Ibrahim Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia. Author

Keywords:

Silicon, Micro-pit;, Reactive ion etching, Sidewall;, Electron beam lithography

Abstract

n this paper, the etching profile of silicon square micro-pits array using SF6 based Reactive ion etching (RIE) is reported. This micro-pits array was created on a Si substrate with poly methyl methacrylate (PMMA) mask during the RIE process. Effects of O2 addition and pressure decreasing were described by chemical reactions of etching and experimental results. Atomic force microscopy (AFM) was utilized to investigate etching profile of these micro-pit arrays. Etching of micro-pits with O2 addition results a vertical sidewall with 3 nm roughness of the inter-pit spacing, while V-groove shaped in sidewall was obtained in absence of O2. These square micro-pits have a good potential to be used in biology applications due to its dimension, especially for confinement region for biological objects e.g. DNA.

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Published

10-05-2026

Issue

Vol. 20 No. (1&2) (2012): Solid State Science and Technology

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Maryam Alsadat Rad, & Kamarulazizi Ibrahim. (2026). EFFECT OF OXYGEN ADDITION ON SIDEWALLS OF SILICON SQUARE MICRO-PIT ARRAYS USING SF6 BASED REACTIVE ION ETCHING. Solid State Science and Technology, 20((1&2), 68-74. https://journal.massmalaysia.org/ojs/index.php/ssst/article/view/634